et4n60 www.estek.com.cn copyright @ estek electronics co., ltd version 0.2 26 sep 2011 1 600v, 4a, n-channel power mosfet ? features ? symbol ? applications ? pin description ? ordering information pin assignment part number package 1 2 3 packing et4n60-220-t to-220 g d s tube et4n60-220f-t to-220f g d s tube et4n60-252-t to-252 g d s tube ET4N60-252-R to-252 g d s tape reel ? switching application ? adaptor ? led lighting ? r ds(on) = (max. 2.5 ? )@v gs =10v . ? gate charge (typical 15nc). ? improved dv/dt capability, high ruggedness. ? 100% avalanche tested. ? maximum junction temperature range(150 o c). v dss =600v i ds =4a r ds(on) =2.5 ?
et4n60 www.estek.com.cn copyright @ estek electronics co., ltd version 0.2 26 sep 2011 2 ? absolute maximum ratings symbol parameter value units v dss drain to source voltage 600 v continuous drain current(@t c = 25 c) 4.0 a i d continuous drain current(@t c = 100 c) 2.5 a i dm drain current pulsed 16 a v gs gate to source voltage + 30 v e as single pulsed avalanche energy 240 mj e ar repetitive avalanche energy 10 mj dv/dt peak diode recovery dv/dt 4.5 v/ns to-220 105 to-220f 33 p d total power dissipation (@t c = 25 c) to-252 50 w t stg, t j storage temperature, junction temperature -55~150 c notes: (1).. repeativity rating : pulse width limited by junction temperature (2).. l = 27.5mh, i as = 4.0 a, v dd = 50 v, r g = 25 ? , starting t j = 25 c (3).. i sd 4.0 a, di/dt 200 a/us, v dd bv dss , starting t j = 25 c ? thermal characteristics value symbol parameter min. typ. max. units to-220 - - 1.18 to-220f - - 3.79 r jc thermal resistance, junction-to-case to-252 - - 2.5 to-220 - - 62.5 to-220f 62.5 r ja thermal resistance, junction-to-ambient to-252 83 c/w ? source-drain diode characteristics and maximum ratings symbol parameter test conditions min. typ. max. units i s maximum continuous source-drain diode forward current - - 4.0 i sm maximum pulsed source-dra in diode forward current - - 16 a v sd diode forward voltage i s = 4.0 a, v gs = 0 v - - 1.4 v t rr reverse recovery time - 300 - ns q rr reverse recovery charge i s = 4.0 a, v gs = 0 v, di f /dt = 100 a/us - 2.2 - uc
et4n60 www.estek.com.cn copyright @ estek electronics co., ltd version 0.2 26 sep 2011 3 ? electrical characteristics (t c =25 c unless otherwise noted ) symbol parameter test conditions min. typ. max. units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 ua 600 - - v bv dss / t j breakdown voltage temperature coefficient i d = 250 ua, referenced to 25 c - 0.6 - v/c v ds = 600 v, v gs = 0 v - - 10 ua i dss drain-source leakage current v ds = 480 v, t c = 125 c - - 100 ua gate-source leakage, forward v gs = 30 v, v ds = 0 v - - 100 na i gss gate-source leakage, reverse v gs = -30 v, v ds = 0 v - - -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 ua 2.0 - 4.0 v r ds(on) static drain-source on-state resistance v gs = 10 v, i d = 2.0 a - 2.0 2.5 ? dynamic characteristics c iss input capacitance - 545 710 c oss output capacitance - 60 80 c rss reverse transfer capacitance v gs = 0 v, v ds =25 v, f = 1 mhz - 8 11 pf dynamic characteristics t d(on) turn-on delay time - 10 30 t r rise time - 35 80 t d(off) turn-off delay time - 45 100 t f fall time v dd = 300 v, i d = 4.0 a, r g =25 ? pulse width 300us, - 40 90 ns q g total gate charge - 15 20 q gs gate-source charge - 2.8 - q gd gate-drain charge(miller charge) v ds = 480 v, v gs = 10 v, i d = 4.0 a - 6.2 - nc
et4n60 www.estek.com.cn copyright @ estek electronics co., ltd version 0.2 26 sep 2011 4 ? typical characteristics
et4n60 www.estek.com.cn copyright @ estek electronics co., ltd version 0.2 26 sep 2011 5 ? typical characteristics (continued)
et4n60 www.estek.com.cn copyright @ estek electronics co., ltd version 0.2 26 sep 2011 6 ? package information to-220
et4n60 www.estek.com.cn copyright @ estek electronics co., ltd version 0.2 26 sep 2011 7 ? package information to-220fp
et4n60 www.estek.com.cn copyright @ estek electronics co., ltd version 0.2 26 sep 2011 8 ? package information to-252
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